RADFET VT01

RADFET VT01

90.00

Six Lead SOT-23 Plastic Package.

400nm doses between 10 cGy (10 rad) and 1 kGy (100 krad)

1 to 50 units €90 per unit (exVAT at 23%)

51 to 100 units €80 per unit (exVAT at 23%)

101+ units €70 per unit (exVAT at 23%)

Category:

Description

Six Lead SOT-23 Plastic Package

400nm doses between 10 cGy (10 rad) and 1 kGy (100 krad)

RADFET is a discrete p-channel MOSFET optimized for radiation sensitivity. RADFETs are sensitive to ionizing radiation: gamma rays, X-rays, and protons.

The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET and this change is related to the radiation dose. The RADFET response is non-linear and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the device and measuring the DC voltage (in the range of 0.5 to 4 volts).