RADFET VT02

RADFET VT02

120.00

Eight Lead Ceramic Side Braze Package.

400nm doses between 10 cGy (10 rad) and 1 kGy (100 krad)

1 to 50 units €120 per unit (exVAT at 23%)

51 to 100 units €110 per unit (exVAT at 23%)

101+ units €100 per unit (exVAT at 23%)

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Description

Eight Lead Ceramic Side Braze Package

400nm doses between 10 cGy (10 rad) and 1 kGy (100 krad)

RADFET is a discrete p-channel MOSFET optimized for radiation sensitivity. RADFETs are sensitive to ionizing radiation: gamma rays, X-rays, and protons.

The VT02 is used by organisations such as the European Space Agency and a number of other space agencies across the globe.    The VT02 is hermetically sealed and slightly larger than the plastic version.

The critical region of the RADFET is its gate oxide. Through generation and trapping of radiation-induced charges in the gate oxide, radiation exposure changes the output voltage of the RADFET and this change is related to the radiation dose. The RADFET response is non-linear and a pre-recorded calibration curve is used to read the dose. The read-out is done by forcing a DC current (in the range of 10s of μA) into the device and measuring the DC voltage (in the range of 0.5 to 4 volts).