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The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs
Abstract: The density of fixed traps (FTs), Nft (cm−2), during isothermal annealing of irradiated radiation-sensitive field-effect transistors (RADFETs) from room temperature to 200 ◦C has been modelled. The modelling has shown that a simple, two-defect model (2DM), containing two defect types: one defect type for positively charged FTs (PCFTs), and…
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Nuclear Inst. and Methods in Physics Research B
Abstract: Pre-irradiation device characteristics, gamma radiation response, and possible use in radiation dosimetry have been investigated for MOSFETs with a 100 nm thick Er2O3 gate dielectric. The performance of these novel devices has been compared with that of commercial pMOS dosimeters (RadFETs) with a standard SiO2 gate oxide of the…
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