Abstract:

The density of fixed traps (FTs), Nft (cm−2), during isothermal annealing of irradiated radiation-sensitive field-effect transistors (RADFETs) from room temperature to 200 ◦C has been modelled. The modelling has shown that a simple, two-defect model (2DM), containing two defect types: one defect type for positively charged FTs (PCFTs), and another for negatively charged FTs (NCFTs), is applicable for the temperatures up to 100 ◦C. However, the three-defect model (3DM), which includes additional PCFT type, should be used for temperatures from 100 to 200 ◦C. The models describing the behaviour of NCFTs during isothermal annealing have also been analysed.

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