News, Insights, and Publications
Get the latest news on Varadis and our industry including key insights and publications from experts in the field.
An improved RADFET based module with an extended dose range of 1kGy TID based on COTS parts
An improved RADFET-based module dosemeter has been developed by Varadis (a spin-out company of Tyndall National Institute in Cork, Ireland) with serial number RM-VT01-A. The module is based on commercially available, commercial-off-the-shelf (COTS) parts and represents an updated version of its predecessor RM-VT01 with an upper dose limit of 10Gy…
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On-Orbit measurements of TID and Dose Rate from two RADFETs on board NANOSAT-1B satellite
Abstract: TID and Dose Rate data from 2 different RADFETs from Tyndall on board NANOSAT-1B from 2009 to the end of mission in July 2015 are presented. Data are in agreement with prediction models. Download: Click HERE to download the full publication.
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Varadis RADFETs provide critical data on Rosetta Space Mission
Abstract: On its more than 10 years journey to comet 67P/Churyumov–Gerasimenko, Rosetta carried RadFET ionising dose monitors in the central electronics of the orbiter instrument COSIMA and the lander instrument SESAME. The readings of the dosimeters were corrected for the temperature of the devices during measurements. Because the sensitivity of…
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Engineers Journal: Tyndall’s radiation detection technology spins out to Varadis
Published in the Engineers Journal Article on 8th July 2019. A novel radiation detection technology, developed at Tyndall National Institute, has been licensed exclusively to Cork-based Varadis. Ionising radiation such as gamma rays, protons and X-rays Prof William Scanlon, CEO, Tyndall, and Brad Wrigley, CEO, Varadis, pictured at Tyndall at…
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Gamma-Ray Irradiation and Post-Irradiation Responses of High Dose Range RADFETs
Abstract: Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor – and charge-pumping characteristics have been monitored. This has been shown to…
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The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs
Abstract: The density of fixed traps (FTs), Nft (cm−2), during isothermal annealing of irradiated radiation-sensitive field-effect transistors (RADFETs) from room temperature to 200 ◦C has been modelled. The modelling has shown that a simple, two-defect model (2DM), containing two defect types: one defect type for positively charged FTs (PCFTs), and…
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Nuclear Inst. and Methods in Physics Research B
Abstract: Pre-irradiation device characteristics, gamma radiation response, and possible use in radiation dosimetry have been investigated for MOSFETs with a 100 nm thick Er2O3 gate dielectric. The performance of these novel devices has been compared with that of commercial pMOS dosimeters (RadFETs) with a standard SiO2 gate oxide of the…
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