News, Insights, and Publications
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Abstract: TID and Dose Rate data from 2 different RADFETs from Tyndall on board NANOSAT-1B from 2009 to the end of mission in July 2015 are presented. Data are in agreement with prediction models. Download: Click HERE to download the full publication.Read More
Abstract: On its more than 10 years journey to comet 67P/Churyumov–Gerasimenko, Rosetta carried RadFET ionising dose monitors in the central electronics of the orbiter instrument COSIMA and the lander instrument SESAME. The readings of the dosimeters were corrected for the temperature of the devices during measurements. Because the sensitivity of…Read More
Published in the Engineers Journal Article on 8th July 2019. A novel radiation detection technology, developed at Tyndall National Institute, has been licensed exclusively to Cork-based Varadis. Ionising radiation such as gamma rays, protons and X-rays Prof William Scanlon, CEO, Tyndall, and Brad Wrigley, CEO, Varadis, pictured at Tyndall at…Read More
Abstract: Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor – and charge-pumping characteristics have been monitored. This has been shown to…Read More
Abstract: The density of fixed traps (FTs), Nft (cm−2), during isothermal annealing of irradiated radiation-sensitive field-effect transistors (RADFETs) from room temperature to 200 ◦C has been modelled. The modelling has shown that a simple, two-defect model (2DM), containing two defect types: one defect type for positively charged FTs (PCFTs), and…Read More
Abstract: Pre-irradiation device characteristics, gamma radiation response, and possible use in radiation dosimetry have been investigated for MOSFETs with a 100 nm thick Er2O3 gate dielectric. The performance of these novel devices has been compared with that of commercial pMOS dosimeters (RadFETs) with a standard SiO2 gate oxide of the…Read More